Anomalous Surface Amorphization of Si(001) Induced by 3-5keV Ar+ Ion Bombardment.

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  • Nakajima Kaoru
    Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
  • Toyofuku Hisami
    Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
  • Kimura Kenji
    Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan

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  • Anomalous Surface Amorphization of Si(001) Induced by 3-5keV Ar〔+〕 Ion Bombardment
  • Anomalous Surface Amorphization of Si(001) Induced by 3–5 keV Ar<sup>+</sup> Ion Bombardment

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Abstract

The process of amorphization of Si(001) by 3–5 keV Ar+ ion bombardment is investigated using high-resolution Rutherford backscattering spectroscopy (RBS)/channeling with a depth resolution of ∼0.6 nm. Particular emphasis is placed on the effect of knocked-in oxygen atoms from a native oxide layer which usually exists at the surface in the industrial processes. No essential difference is observed in the amorphization process between the Si(001) wafers with and without a native oxide layer, showing no important role of the knocked-in oxygen in the amorphization process. The amorphization is found to proceed from the surface instead of from the projected range of the implanted ions or the peak depth of the ion-induced defects. The observed results can be explained in terms of preferential defect clustering at surfaces.

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