Detection of Nanopipes in GaN Films by Localized Avalanche Breakdown Using NaOH Electrolyte.

DOI Web Site Web Site Web Site 参考文献34件
  • Ohkubo Mitsugu
    Department of Electrical and Electronics Engineering, Faculty of Engineering, Fukui University, 3-9-1 Bunkyo, Fukui 910-8507, Japan

この論文をさがす

抄録

Nanopipes in high-quality GaN films grown by metalorganic chemical vapor deposition (MOCVD) on a sapphire substrate were investigated by generating hollow etch pits. Hollow etch pits were formed on the surface of GaN films by localized avalanche breakdown using NaOH electrolyte. Using scanning electron microscopy (SEM) and atomic force microscopy (AFM), the relationship between hollow etch pits and crystalline defects in GaN films was investigated. It was found that hollow etch pits were formed at the nanopipes and electrical discharge occurred through these nanopipes at high electric fields, resulting in localized avalanche breakdown. Defect etching by localized avalanche breakdown was found to be a simple method to detect nanopipes in GaN films.

収録刊行物

参考文献 (34)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ