Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films.

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  • Li Hongdong
    Satellite Venture Business Laboratory, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
  • Wang Tao
    Nitride Semiconductor Co., Ltd., 115-7 Itayajima, Akinolami, Seto-cho, Naruto-shi, Tokushima 771-0360, Japan
  • Lacroix Yves
    Satellite Venture Business Laboratory, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
  • Jiang Nan
    Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
  • Sakai Shiro
    Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan

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The influence of inversion domains (IDs) on the formation of V-shaped pits in GaN films grown by metalorganic chemical vapor deposition has been investigated using transmission electron microscopy. It was found that IDs can induce V-shaped pits which have a large size distribution. Upon introducing InGaN/GaN multiple-quantum wells to observe various growth stages, our results showed that the origin of these ID-induced pits may be a delayed formation of the IDs during island-island coalescence at the initial stage of film growth, thus we need not adopt a general explanation based on the different growth rates for the two opposite polarities.

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