The Effect of the Growth Temperature on Polyoxide by Rapid Thermal Processing.

DOI Web Site Web Site Web Site 被引用文献1件 参考文献32件
  • Chang Kow Ming
    Department of Electronics Engineering and Institute of Electronics of National Chiao-Tung University, Hsin-Chu, Taiwan, Republic of China
  • Lee Tzyh Cheang
    Department of Electronics Engineering and Institute of Electronics of National Chiao-Tung University, Hsin-Chu, Taiwan, Republic of China
  • Sun Yong Long
    Department of Electronics Engineering and Institute of Electronics of National Chiao-Tung University, Hsin-Chu, Taiwan, Republic of China

書誌事項

タイトル別名
  • Effect of the Growth Temperature on Polyoxide by Rapid Thermal Processing

この論文をさがす

説明

A rapid thermal oxynitridation process using N2O gas as the oxidant has been developed. Due to a smoother polyoxide/polysilicon interface, polyoxide grown by rapid thermal processing has better reliability than that of polyoxide grown by a conventional furnace. Moreover, in order to explore the effects of growth temperature on polyoxides, polyoxides were grown at different temperatures in this study. From this work, we find that polyoxide grown at low temperatures has better reliability than polyoxides grown at high temperature and exhibits improved characteristics such as higher breakdown electric field, less gate voltage shift, and larger charger-to-breakdown.

収録刊行物

被引用文献 (1)*注記

もっと見る

参考文献 (32)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ