Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition.

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  • Kawaguchi Masao
    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • Miyamoto Tomoyuki
    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • Gouardes Eric
    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • Schlenker Dietmar
    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • Kondo Takashi
    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • Koyama Fumio
    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • Iga Kenichi
    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

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We report on the lasing characteristics of low-threshold long-wavelength GaInNAs double quantum well (DQW) lasers grown by metalorganic chemical vapor deposition (MOCVD). We have achieved a threshold current density of 450 A/cm2 for a 1.28-μm-emitting laser. This is the lowest value for 1.3-μm-range GaInNAs lasers grown by MOCVD. We also observed high characteristic temperatures (T0) of 210 K and 130 K for 1.25 μm and 1.28 μm lasers, respectively. In addition, we investigated the gradual change in lasing characteristics under pulsed operation. The blue shift of an emission wavelength and a threshold current reduction were observed, which is similar to that observed in the thermal annealing of GaInNAs.

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