Characteristics of Nucleation Using the Bias-Enhanced Nucleation Method at Low Pressure.

DOI Web Site Web Site Web Site 参考文献14件

この論文をさがす

抄録

The bias-enhanced nucleation (BEN) method is well known as a pretreatment method for nucleation, and the nucleus is generated in the plasma sheath region during the BEN process. To utilize high-density nucleation at low pressure and to expand the nucleation region in hot-filament chemical vapor deposition (HFCVD), the BEN method was applied under a low-pressure condition in which the plasma and plasma sheath expanded. Some substrates were treated in hydrogen plasma or activated hydrogen before nucleation. The purpose of this study is to confirm the characteristics of nucleation at low pressure and to determine the condition for realizing uniform, high-density and large-area nucleation. By using emitted electrons, bias voltage and current were controlled to be steady at the low pressure of 0.1 Torr. The nucleation density increased and the width of the nucleation area expanded when the substrate surface was treated in hydrogen plasma or activated hydrogen before nucleation. It was proposed that the nucleation mechanism is as follows. (1) A substrate surface was treated by H ions and H radicals, (2) a nucleation site was formed on the treated position and (3) nucleation occurred on the nucleation site. To achieve high-density and large-area nucleation, it is necessary to obtain the treated substrate surface and to generate carbon-containing cations, H ions and H radicals with appropriate ratios and density distributions in the nucleation phase.

収録刊行物

参考文献 (14)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ