Investigation of Gate-Induced Drain Leakage(GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs
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- Choi Yang-Kyu
- Department of Electrical Engineering and Computer Sciences, University of California
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- Ha Daewon
- Department of Electrical Engineering and Computer Sciences, University of California
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- King Tsu-Jae
- Department of Electrical Engineering and Computer Sciences, University of California
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- Bokor Jeffrey
- Department of Electrical Engineering and Computer Sciences, University of California
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説明
Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and DG thin-body devices are reported for the first time. The thin-body devices exhibit much lower GIDL current than bulk-Si MOSFETs, and the GIDL is found to decrease with decreasing body thickness. These results can be explained by the reduction in transverse electric field at the surface of the drain and the increase in transverse effective mass with decreasing body thickness.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 42 (4B), 2073-2076, 2003
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206255040768
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- NII論文ID
- 130004530730
- 10010801109
- 210000053239
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- NDL書誌ID
- 6523403
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDLサーチ
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