Investigation of Gate-Induced Drain Leakage(GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs

  • Choi Yang-Kyu
    Department of Electrical Engineering and Computer Sciences, University of California
  • Ha Daewon
    Department of Electrical Engineering and Computer Sciences, University of California
  • King Tsu-Jae
    Department of Electrical Engineering and Computer Sciences, University of California
  • Bokor Jeffrey
    Department of Electrical Engineering and Computer Sciences, University of California

この論文をさがす

説明

Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and DG thin-body devices are reported for the first time. The thin-body devices exhibit much lower GIDL current than bulk-Si MOSFETs, and the GIDL is found to decrease with decreasing body thickness. These results can be explained by the reduction in transverse electric field at the surface of the drain and the increase in transverse effective mass with decreasing body thickness.

収録刊行物

被引用文献 (6)*注記

もっと見る

参考文献 (18)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ