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- Itaya Yoshio
- Department of Physical Electronics, Tokyo Institute of Technology
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- Tanbun-Ek Tawee
- Department of Physical Electronics, Tokyo Institute of Technology
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- Kishino Katsumi
- Department of Physical Electronics, Tokyo Institute of Technology
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- Arai Shigehisa
- Department of Physical Electronics, Tokyo Institute of Technology
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- Suematsu Yasuharu
- Department of Physical Electronics, Tokyo Institute of Technology
書誌事項
- タイトル別名
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- 1.6.MU.m Wavelength buried heterostructure GaInAsP/InP lasers.
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説明
GaInAsP/InP buried heterostructure lasers with anti-melt back layer emitting at 1.6 μm wavelength were fabricated and operated in a single mode in cw condition at room temperature. The gain suppression in spontaneously emitting resonant modes due to the lasing mode was found out, and it was significantly larger than that in lightly doped GaAs/AlGaAs DH lasers.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 19 (3), L141-L144, 1980
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206255143680
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- NII論文ID
- 130003462651
- 210000020551
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- ISSN
- 13474065
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可