Thermal Desorption Behavior of AlF<sub>3</sub>Formed on Al<sub>2</sub>O<sub>3</sub>

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  • Watanabe Morimichi
    Materials Research Laboratory, NGK INSULATORS, LTD.
  • Iida Takashi
    Department of Molecular Design and Engineering, Graduate School of Engineering, Nagoya University
  • Akiyama Keijiro
    Department of Molecular Design and Engineering, Graduate School of Engineering, Nagoya University
  • Ishikawa Takahiro
    Materials Research Laboratory, NGK INSULATORS, LTD.
  • Sakai Hiroaki
    Materials Research Laboratory, NGK INSULATORS, LTD.
  • Sawabe Kyoichi
    Department of Molecular Design and Engineering, Graduate School of Engineering, Nagoya University
  • Shobatake Kosuke
    Department of Molecular Design and Engineering, Graduate School of Engineering, Nagoya University

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  • Thermal Desorption Behavior of AlF3 Formed on Al2O3

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Thermal desorption behaviors of the AlF3 layer formed on Al2O3 in the sample temperature range from Ts=300 to 930 K have been studied using molecular beam mass spectrometry combined with a time-of-flight (TOF) technique. Fluorine atoms were detected as the desorbed species at sample temperatures of Ts=625 to 850 K and the intensity was found to be peaked at Ts=750 K. AlF2 species whose translational temperature Ttr is approximately 100 K lower than Ts were also detected as desorbed species above Ts=850 K and the intensity increased exponentially as Ts was raised. Based on these results, the desorption behavior of AlF3 species is discussed.

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