Metalorganic Chemical Vapor Deposition of Thin Film ZrO<sub>2</sub>and Pb(Zr,Ti)O<sub>3</sub>: Precursor Chemistry and Process Characteristics

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  • Metalorganic Chemical Vapor Deposition of Thin Film ZrO2 and Pb(Zr,Ti)O3: Precursor Chemistry and Process Characteristics.

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Metalorganic chemical vapor deposition (MOCVD) process characteristics of several zirconium source reagents were investigated. These source reagents included metal β-diketonates [e.g., Zr(thd)4 where thd = (2,2,6,6-tetramethyl-3,5-heptanedionate)] and metal alkoxide/β-diketonates [e.g., Zr(OiPr)2(thd)2 and Zr(OtBu)2(thd)2]. Thermal properties and transport behaviors of these precursors were examined by thermogravimetric analysis. Zirconium oxide films were deposited on silicon substrates at reduced pressure. Under the process conditions examined, the deposition behavior was mass-transport controlled, and Zr(OiPr)2(thd)2 and Zr(OtBu)2(thd)2 behaved similarly. The films exhibited low carbon content. Pb(Zr, Ti)O3 (PZT) films were deposited on iridium-coated silicon substrates under reduced pressure. Zirconium incorporation efficiency was significantly improved for Zr(OiPr)2(thd)2 when compared to Zr(thd)4. Use of M(OtBu)2(thd)2 (where M = Zr or Ti) as source reagents for MOCVD of PZT was examined and compared to M(OiPr)2(thd)2 analogues. In this case, higher process pressures were needed to improve the incorporation efficiencies of M(OtBu)2(thd)2 precursors.

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