Vapor phase growth of InGaAsP/InP DH structures by the dual-growth-chamber method.
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- Mizutani Takashi
- Central Research Laboratories, Nippon Electric Company
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- Yoshida Masaji
- Central Research Laboratories, Nippon Electric Company
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- Usui Akira
- Central Research Laboratories, Nippon Electric Company
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- Watanabe Hisatsune
- Central Research Laboratories, Nippon Electric Company
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- Yuasa Tonao
- Central Research Laboratories, Nippon Electric Company
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- Hayashi Izuo
- Central Research Laboratories, Nippon Electric Company
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説明
A chloride transport vapor phase epitaxial technique has been developed for InGaAsP/InP heterostructures using the “dual-growth-chamber” method.<BR>Two independent growth chambers, one for InGaAsP and the other for InP, are connected at an exhausting end. A substrate was transferred mechanically from one chamber to the other within a few seconds without having cross contamination growth at the hetero-interface. Heterostructures with lattice-matched defect-free interfaces of less than 50 Å abruptness have been obtained. InGaAsP/InP DH lasers made by this technique lased in CW at room temperature with thresholds comparable to those made by LPE.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 19 (2), L113-L116, 1980
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206255705600
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- NII論文ID
- 110003896394
- 130003462603
- 210000020542
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- NII書誌ID
- AA00690800
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/00214922
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
