10-15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing.

DOI Web Site Web Site 被引用文献19件 参考文献3件
  • Ito Takayuki
    Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
  • Iinuma Toshihiko
    Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
  • Murakoshi Atsushi
    Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
  • Akutsu Haruko
    Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
  • Suguro Kyoichi
    Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
  • Arikado Tsunetoshi
    Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
  • Okumura Katsuya
    Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
  • Yoshioka Masaki
    Lamp Technology and Engineering Division, Ushio Inc., 1194 Sazuchi, Bessho-cho, Himeji, Hyogo 671-0224, Japan
  • Owada Tatsushi
    Lamp Technology and Engineering Division, Ushio Inc., 1194 Sazuchi, Bessho-cho, Himeji, Hyogo 671-0224, Japan
  • Imaoka Yasuhiro
    Development Department for Electronics Equipment, Dainippon Screen Mfg. Co. Ltd., 322 Furukawa-cho, Hazukashi, Fushimi-ku, Kyoto 612-8486, Japan
  • Murayama Hiromi
    Development Department for Electronics Equipment, Dainippon Screen Mfg. Co. Ltd., 322 Furukawa-cho, Hazukashi, Fushimi-ku, Kyoto 612-8486, Japan
  • Kusuda Tatsuhumi
    Development Department for Electronics Equipment, Dainippon Screen Mfg. Co. Ltd., 322 Furukawa-cho, Hazukashi, Fushimi-ku, Kyoto 612-8486, Japan

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説明

Flash-lamp annealing (FLA) technology, a new method of activating implanted impurities, is proposed. FLA is able to reduce the time of the heating cycle to within the millisecond range. With this technology, an abrupt profile is realized, with a dopant concentration that can exceed the maximum carrier concentration obtained by conventional rapid thermal annealing (RTA) or furnace annealing. In contrast to a laser annealing method, FLA can activate dopants in an 8-inch-diameter substrate and, simultaneously, strictly control diffusion of dopants so as not to melt the substrate surface by radiation. FLA presents the possibility of fabricating sub-0.1-μm MOSFETs with good characteristics.

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