Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition.

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  • Egawa Takashi
    Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
  • Moku Tetsuji
    Semiconductor Research and Development, Sanken Electric Co., Ltd., Kitano, Niiza 352-8666, Japan
  • Ishikawa Hiroyasu
    Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
  • Ohtsuka Kouji
    Semiconductor Research and Development, Sanken Electric Co., Ltd., Kitano, Niiza 352-8666, Japan
  • Jimbo Takashi
    Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

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  • Improved characteristics of blue and green InGaN‐based light‐emitting diodes on Si grown by metalorganic chemical vapor deposition

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Abstract

We report significantly improved characteristics of InGaN multiple-quantum well blue and green light-emitting diodes (LEDs) on Si (111) substrates using metalorganic chemical vapor deposition. A high-temperature-grown thin AlN layer and AlN/GaN multilayers have been used for the growth of high-quality active layer on Si substrate. The blue LED on Si exhibited an operating voltage of 4.1 V, a series resistance of 30 Ω, an optical output power of 18 μW and a peak emission wavelength of 478 nm with a full width at half maximum of 22 nm at 20 mA drive current. These characteristics are comparable to those of LED on sapphire substrate. The green LED was also fabricated on Si substrate successfully.

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