V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate.

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  • Li Hongdong
    Satellite Venture Business Laboratory, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
  • Wang Tao
    Nitride Semiconductor Co., Ltd., 115-7 Itayajima, Akinolami, Seto-cho, Naruto, Tokushima 771-0360, Japan
  • Liu Yuhuai
    Satellite Venture Business Laboratory, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
  • Ao Jinping
    Satellite Venture Business Laboratory, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
  • Sakai Shiro
    Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan

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Origin and morphology evolution of a self-terminating V-shaped defect in AlGaN/GaN superlattices (SLs) deposited on thin undoped-GaN (u-GaN) layers on sapphire have been investigated using transmission electron microscopy. The V-shaped defects, which generally originated from pits on the top plane of the u-GaN layers with a critical thickness below 500 nm, and deposited with inclined SL structure during the growth of SLs, could terminate in the SL region after propagating to a distance of about 800-1000 nm. The structural variations of the defects could be attributed to the different growth rates between the surrounding matrix and the domains within the defects, at various growth stages.

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