High Power Density and Large Voltage Swing of Enhancement-Mode Al<sub>0.5</sub>Ga<sub>0.5</sub>As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V<i>L</i>-Band Applications

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  • Chiu Hsien-Chin
    Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, R.O.C.
  • Yang Shih-Cheng
    Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, R.O.C.
  • Chan Yi-Jen
    Department of Electrical Engineering, National Central University, Chungli, Taiwan 32054, R.O.C.

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  • High Power Density and Large Voltage Swing of Enhancement-Mode Al0.5Ga0.5As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5V L-Band Applications.

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説明

A high power density and a large voltage swing of Al0.5Ga0.5As/InGaAs enhancement-mode pseudomorphic high electron mobility transistor (pHEMTs) operated under Vds = 3.5 V for L-band application have been achieved using a high-uniformity and high-selectivity BCl3+CHF3 gas mixture. In this study, we improve the current density and the gate voltage operation region of the device by increasing the Al mole fraction of AlxGa1-xAs to x = 0.5. The developed 1.0-μm-long and 1 mm-wide gate FETs exhibit Vth = +0.24 V and Imax of 286 mA/mm. The maximum output power under a 1.9 GHz operation is 95 mW/mm, with a linear power gain of 18.7 dB, and a power-added efficiency of 60%. These characteristics demonstrate that E-pHEMTs have great potential for using in microwave power device applications.

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