Fabrication of InGaN Multiple Quantum Wells Grown by Hydrogen Flux Modulation in RF Molecular Beam Epitaxy.

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  • Takahashi Kazuya
    Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
  • Okada Yoshitaka
    Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
  • Kawabe Mitsuo
    Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

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We have investigated the effect of atomic hydrogen on In incorporation during InGaN growth, and that of hydrogen flux modulation on the fabrication of InGaN multiquantum wells (MQWs) by RF molecular beam epitaxy (MBE). The In incorporation in InGaN was increased with increasing atomic hydrogen flow rate, and InGaN MQW structures were successfully formed solely by only modulating the hydrogen flux during growth. The InGaN MQW structures have been fabricated without changing other growth conditions such as Ga and In cell temperatures, substrate temperature and the RF nitrogen plasma condition. It was also found that the average In composition and period of superlattice increased with increasing hydrogen flow rate.

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