Atomic Force Microscopy Characterization of ZnTe Epitaxial Thin Films

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  • Klapetek Petr
    Department of Physical Electronics, Faculty of Science, Masaryk University Czech Metrology Institute
  • Ohlídal Ivan
    Department of Physical Electronics, Faculty of Science, Masaryk University
  • Montaigne-Ramil Alberto
    Institute of Semiconductor Physics, Johannes Kepler University
  • Bonanni Alberta
    Institute of Semiconductor Physics, Johannes Kepler University
  • Stifter David
    Institute of Semiconductor Physics, Johannes Kepler University
  • Sitter Helmut
    Institute of Semiconductor Physics, Johannes Kepler University

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In this paper, results concerning atomic force microscopy studies of the upper boundaries of ZnTe epitaxial thin films prepared by molecular beam epitaxy onto gallium arsenide single crystal substrates are presented. It is shown that the upper boundaries of these films contain grains forming a faceted structure. This faceted structure is quantitatively described by the four statistical quantities: root mean square values of the heights of the irregularities, power spectral density function (PSDF), diagram describing the distribution of the directions of the normals to the boundaries and one-dimensional distribution of the heights of the irregularities. The grain structure is quantitatively described by two quantities: mean grain size and grain size distribution.

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