Indium Phosphide & Related Materials. Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics.

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  • Ledentsov Nikolai N.
    Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany Abraham F. Ioffe Physical Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia
  • Bimberg Dieter
    Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany
  • Ustinov Victor M.
    Abraham F. Ioffe Physical Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia
  • Alferov Zhores I.
    Abraham F. Ioffe Physical Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia
  • Lott James A.
    Air Force Institute of Technology, 2950 P Street B640, Wright-Patterson AFB, OH 45433, USA

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  • Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics

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Abstract

We report on the fabrication of quantum dot (QDs) heterostructures for applications in optoelectronics. Different kinds of QDs are currently used: (i) three-dimensional quantum dots obtained by Stranski-Krastanow or Volmer-Weber growth in the InAs-GaAs material system, (ii) two-dimensionally-shaped QDs formed by submonolayer insertions in the InAs-GaAs and similar systems, (iii) GaAs QDs formed on a corrugated (311)A AlAs surface, (iv) and QDs obtained by spinodal decomposition and activated spinodal decomposition in InGaAs-GaAs and InGaAsN-GaAs material systems. Formation of uniformly sized and shaped QDs is possible in all of these approaches and is mostly governed by thermodynamics. Ultrahigh modal gain and giant optical nonlinearity can be achieved in dense arrays of very small QDs. Long wavelength (1.3-1.6 μm) emission can be achieved using large InAs QDs. Recent advances in growth have made possible the realization of GaAs 1.3 μm continuous wave (CW) vertical-cavity surface-emitting lasers (VCSELs) with ∼ 0.8 mW output power and long operation lifetime.

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