Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone

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  • Tosaka Aki
    National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Instrumentation Frontier
  • Nishiguchi Tetsuya
    National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Instrumentation Frontier Meidensha Corporation
  • Nonaka Hidehiko
    National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Instrumentation Frontier
  • Ichimura Shingo
    National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Instrumentation Frontier

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Abstract

An ultra low-temperature (<300°C) silicon oxidation process in which KrF excimer laser light (λ=248 nm) is irradiated in highly concentrated ozone has been developed. The growth rate of SiO2 film was 5.2 nm/10 min at 300°C and 3.6 nm/10 min at 70°C. The leakage current densities of grown at 70°C SiO2 in an electric field of over 8 MV/cm match well the calculated curve based on the Fowler–Nordheim tunneling. The oxidation mechanisms for two growth modes are discussed.

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