Nucleation Control in Solid-Phase Crystallization of a-Si/SiO<sub>2</sub> by Local Ge Insertion
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- Tsunoda Isao
- Department of Electronics, Kyushu University
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- Nagatomo Kei
- Department of Electronics, Kyushu University
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- Kenjo Atsushi
- Department of Electronics, Kyushu University
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- Sadoh Taizoh
- Department of Electronics, Kyushu University
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- Yamaguchi Shinya
- Central Research Laboratory, Hitachi Ltd.
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- Miyao Masanobu
- Department of Electronics, Kyushu University
書誌事項
- タイトル別名
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- Nucleation Control in Solid-Phase Crystallization of a-Si/SiO2 by Local Ge Insertion
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抄録
The effects of local Ge insertion on the solid-phase crystallization (SPC) of a-Si films have been investigated. Three types of stacked structures, i.e., (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO2, and (c) SiO2/a-Ge/a-Si/SiO2, were annealed at 600°C. For structure (a) with thin (∼5 nm) Ge films, Ge atoms completely diffused into both sides of a-Si regions, and SPC was not enhanced. However, when Ge thickness was increased to more than 10 nm, Ge atoms were localized. Such localization became significant for structures (b) and (c) even for samples with thin Ge films. In addition, significant enhancement of SPC of a-Si was observed. These results indicated that crystal nucleation was initiated in Ge layers, and then propagated into a-Si layers. Therefore, interface-nucleation-driven SPC becomes possible using structures (b) and (c). This will be a useful tool in achieving oriented Si growth on SiO2.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 43 (4B), 1901-1904, 2004
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206263630592
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- NII論文ID
- 10012948846
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- NDL書誌ID
- 6938840
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可