Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P+-Implanted at Room Temperature

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  • Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P〔+〕-Implanted at Room Temperature
  • Defect Formation in (0001)- and (11\bar20)-Oriented 4H-SiC Crystals P<sup>+</sup>-Implanted at Room Temperature

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Transmission electron microscopy was applied to investigating defect formation in (0001)- and (11\\bar20)-oriented 4H-SiC crystals in which a high dose of phosphorous ions had been implanted at room temperature. Defect formation after postimplantation annealing was totally different for the two crystal orientations. The implanted layer of the (0001)-oriented crystal recrystallized to form a highly defective polycrystal containing 3C-SiC grains. On the other hand, the (11\\bar20)-oriented crystal was virtually defect-free except for a very thin residual amorphous film in the topmost region.

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