Improved Step-Graded-Channel Heterostructure Field-Effect Transistor

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  • Yu Shu-Jenn
    Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
  • Hsu Wei-Chou
    Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
  • Li Yih-Juan
    Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
  • Chen Yeong-Jia
    Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University

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A heterostructure field-effect transistor with a step-graded channel has been successfully fabricated. The conduction electrons are distant from the AlGaAs/InGaAs interface; thus the Coulomb scattering is reduced, and consequently, electron mobility is increased. A high drain-current density and a large gate-voltage swing can be obtained. For a 1.2×100 μm2 gate, the maximum saturation drain-current density is 373 mA/mm and the maximum extrinsic transconductance is 148 mS/mm with a gate-voltage swing of 1.9 V.

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