Epitaxial Growth of Ferromagnetic Fe<sub>3</sub>Si Films on CaF<sub>2</sub>/Si(111) by Molecular Beam Epitaxy
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- Sunohara Tsuyoshi
- Institute of Applied Physics, University of Tsukuba
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- Kobayashi Ken’ichi
- Institute of Applied Physics, University of Tsukuba
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- Umada Masakazu
- Institute of Applied Physics, University of Tsukuba
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- Yanagihara Hideto
- Institute of Applied Physics, University of Tsukuba
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- Kita Eiji
- Institute of Applied Physics, University of Tsukuba
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- Akinaga Hiroyuki
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
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- Suemasu Takashi
- Institute of Applied Physics, University of Tsukuba
書誌事項
- タイトル別名
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- Epitaxial Growth of Ferromagnetic Fe3Si Films on CaF2/Si(111) by Molecular Beam Epitaxy
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抄録
Ferromagnetic Fe3Si/CaF2 hybrid structures were epitaxially grown on Si(111) by molecular beam epitaxy. When Si and Fe were directly deposited on the Si substrate, it was difficult to prevent inclusion of FeSi in the grown films. This problem was overcome by forming a CaF2 epitaxial film on Si(111) first, followed by codeposition of Si and Fe to form Fe3Si. Fe3Si films were epitaxially grown on the CaF2 at 400°C. A distinct square-like hysteresis loop was observed at room temperature in the magnetic field dependence of Kerr rotation.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (20-23), L715-L717, 2005
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206264101504
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- NII論文ID
- 210000059635
- 10016150984
- 130004533327
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- NII書誌ID
- AA11906093
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 7339355
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可