Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor

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The drain current vs gate-voltage characteristics of a phosphorus-doped n-channel silicon-on-insulator metal-oxide-semiconductor field-effect transistor have been investigated. It was shown that, by controlling the voltage to the substrate at 20 K, the charge states of phosphorus donors can be changed in a controlled manner. Most of the donors are neutralized for the substrate voltage of around 0 V, while a major portion of the donors is ionized for a positive or negative voltage. Such a change can be detected by monitoring the change in the threshold voltage of the transistor. This is an experimental demonstration of the systematic control and monitoring of donor charge states in silicon.

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