Effect of Slurry Surfactant on Nanotopography Impact in Chemical Mechanical Polishing
-
- Katoh Takeo
- Nano-SOI Process Laboratory, Hanyang University
-
- Kim Sung-Jun
- Nano-SOI Process Laboratory, Hanyang University
-
- Paik Ungyu
- Department of Ceramic Engineering, Hanyang University
-
- Park Jea-Gun
- Nano-SOI Process Laboratory, Hanyang University
この論文をさがす
抄録
The effect of surfactant in a ceria slurry on the impact of nanotopography on post-CMP oxide thickness deviation (OTD) was investigated in a blanket wafer study. The ceria slurry was prepared using the solid-state displacement reaction method and an anionic organic surfactant was added with the concentration from 0 to 0.8 wt%. Under the condition of a fixed removal depth, the magnitude of post-CMP OTD due to nanotopography increased with the surfactant concentration in the slurry, demonstrating that the impact of nanotopography can be controlled using the slurry characteristics.
収録刊行物
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 42 (9A), 5430-5432, 2003
The Japan Society of Applied Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001206264804224
-
- NII論文ID
- 10011613727
- 210000054059
-
- NII書誌ID
- AA10457675
-
- ISSN
- 13474065
- 00214922
-
- NDL書誌ID
- 6684867
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可