Growth of MnGeP<sub>2</sub> Thin Films by Molecular Beam Epitaxy
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- Minami Kazuyuki
- Graduate School of Engineering, Tokyo University of Agriculture and Technology
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- Jogo Jumpei
- Graduate School of Engineering, Tokyo University of Agriculture and Technology
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- Smirnov Valery
- Ioffe Physico-Technical Institute
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- Yuasa Hideki
- Graduate School of Engineering, Tokyo University of Agriculture and Technology
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- Nagatsuka Toshikazu
- Graduate School of Engineering, Tokyo University of Agriculture and Technology
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- Ishibashi Takayuki
- Graduate School of Engineering, Tokyo University of Agriculture and Technology
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- Morishita Yoshitaka
- Graduate School of Engineering, Tokyo University of Agriculture and Technology
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- Matsuo Yuriko
- Graduate School of Engineering, Tokyo University of Agriculture and Technology
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- Kangawa Yoshihiro
- Graduate School of Engineering, Tokyo University of Agriculture and Technology
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- Koukitu Akinori
- Graduate School of Engineering, Tokyo University of Agriculture and Technology
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- Sato Katsuaki
- Graduate School of Engineering, Tokyo University of Agriculture and Technology
書誌事項
- タイトル別名
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- Growth of MnGeP2 Thin Films by Molecular Beam Epitaxy
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Epitaxial growth of the Mn-containing novel ternary compound MnGeP2 has been investigated. Prior to the growth experiments, theoretical studies using an ab initio calculation were carried out, on the basis of which the stable existence of MnGeP2 with a chalcopyrite structure was predicted. Growth experiments of Mn-Ge-P were performed on GaAs(001) and InP(001) substrates using a molecular beam epitaxy (MBE) technique, in which Mn and Ge were supplied from solid sources and P from a tertiary butyl phosphine (TBP) gas source. The optimum growth condition has been estimated on the basis of X-ray diffraction studies. Oriented overgrowth of MnGeP2 was confirmed from a reciprocal lattice mapping (RLM) on X-ray diffraction (XRD) analyses, and lattice constants have been determined to be a=0.569 nm and c=1.13 nm based on the assumption that the material has a tetragonal crystal structure.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (8-11), L265-L267, 2005
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206265392640
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- NII論文ID
- 10014505743
- 210000059481
- 130004534557
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- NII書誌ID
- AA11906093
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 7288310
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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