<sup>29</sup>Si Nuclear-Spin Decoherence Process Directly Observed by Multiple Spin-Echoes for Pure and Carrier-Less Silicon

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  • Watanabe Shinji
    Graduate School of Science and Technology, Niigata University
  • Sasaki Susumu
    Department of Materials Science and Technology, Faculty of Engineering, Niigata University Core Research for Evolutional Science and Technology, Japan Science and Technology Corporation (CREST-JST)

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  • 29Si Nuclear-Spin Decoherence Process Directly Observed by Multiple Spin-Echoes for Pure and Carrier-Less Silicon

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We report on the 29Si nuclear spin decoherence time at room temperature for a pure (99.99999%, 7N) and carrier-less (p-type, doping level of 1015 cm−3) silicon in which 29Si nuclei are naturally abundant (4.7%). Despite the experimental difficulties coming from the extremely long spin-lattice relaxation time T1 (of the order of 104 s), we have successfully observed a series of spin-echoes of which the time dependence is characterized by the decoherence time T2. We found that the decoherence process deviates from a single Gaussian or Lorentzian function but is well-reproduced by a bi-exponential function with the shorter T2S=15±5 ms and the longer T2L=200±20 ms.

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