Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon
-
- Simoen Eddy
- IMEC
-
- Rafí Joan Marc
- IMEC
-
- Claeys Cor
- IMEC E. E. Department, K.U. Leuven
-
- Neimash Vlad
- Institute of Physics, National Academy of Science of Ukraine
-
- Kraitchinskii Anatolii
- Institute of Physics, National Academy of Science of Ukraine
-
- Kras’ko Mykola
- Institute of Physics, National Academy of Science of Ukraine
-
- Tischenko Valerii
- Institute of Physics, National Academy of Science of Ukraine
-
- Voitovych Vasyl
- Institute of Physics, National Academy of Science of Ukraine
-
- Versluys Jorg
- Department of Solid-State Sciences, Ghent University
-
- Clauws Paul
- Department of Solid-State Sciences, Ghent University
この論文をさがす
説明
This work describes the radiation defects formed in high-temperature (450°C) 1 MeV electron-irradiated n-type Czochralski (Cz) silicon. A dedicated irradiation configuration has been used, which relies on sample heating by the energy deposited by the electron beam current. It is shown that the vacancy oxygen (VO) or A center is the dominant radiation defect under these circumstances. In addition, a whole series of unknown deep electron traps is reported, whose trap parameters (activation energy, electron capture cross section) depend, among other factors, on the starting interstitial oxygen concentration. It is speculated that their origin is related to complexes of oxygen and vacancies.
収録刊行物
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 42 (12), 7184-7188, 2003
The Japan Society of Applied Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001206266093568
-
- NII論文ID
- 130004530222
- 10011839651
- 210000054465
-
- NII書誌ID
- AA10457675
-
- ISSN
- 13474065
- 00214922
-
- NDL書誌ID
- 6785172
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可
