Electrical Properties of Holmium-Doped BaTiO<sub>3</sub>
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- Jeong Jaill
- Sungkyunkwan University, Department of Materials Engineering
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- Lee Eun Jung
- Sungkyunkwan University, Department of Materials Engineering
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- Han Young Ho
- Sungkyunkwan University, Department of Materials Engineering
書誌事項
- タイトル別名
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- Electrical Properties of Holmium-Doped BaTiO3
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The effects of Ho (holmium) doping on the electrical properties and microstructural development of (Ba1−xHox)TiO3 were investigated by means of defect chemistry on the basis of equilibrium electrical conductivity data measured at 1300°C, as a function of oxygen activity. Ho2O3 additions to BaTiO3 up to 0.3 mol% were compensated by electrons under all oxygen partial pressures and the samples exhibited a low insulating resistance at room temperature. However, at Ho>0.3 mol%, the compensation mode switched from electrons to cation vacancies in the region of high oxygen partial pressure. The solubility limit of HoBa• was confirmed to be less than 3.0 mol%. The specimens doped with Ho<0.5 mol% had a low insulating resistance and large grains, whereas high insulating resistance and fine grains were observed in the samples doped with Ho grater than 0.5 mol%.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (6A), 4047-4051, 2005
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206266716032
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- NII論文ID
- 210000058135
- 10016441877
- 130004534139
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 7338168
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用不可