- 【Updated on May 12, 2025】 Integration of CiNii Dissertations and CiNii Books into CiNii Research
- Trial version of CiNii Research Automatic Translation feature is available on CiNii Labs
- Suspension and deletion of data provided by Nikkei BP
- Regarding the recording of “Research Data” and “Evidence Data”
Effect of Growth Parameters on the Epitaxial Growth of BP on Si Substrate
-
- Nishinaga Tatau
- Department of Electrical Engineering, Faculty of Engineering, Nagoya University
-
- Mizutani Takashi
- Department of Electrical Engineering, Faculty of Engineering, Nagoya University
Search this article
Description
The effect of the growth parameters on the epitaxial growth of boron monophosphide (BP) was studied in detail for BBr3–PCl3–H2–Si substrate CVD system. The growth temperature, substrate orientation, PCl3/BBr3 molar ratio and substrate dimensions were varied independently keeping the other parameters constant. The best BP single crystal was grown at 1050°C on the thick and disk shaped substrate with {111} surface. The largest single crystal thus obtained had the dimensions of 3.5 cm2×55 μm. The highest mobility and the lowest carrier concentration were respectively 27 cm2/V·sec and 2.4×1019/cm3. Mass spectrometric analysis showed the contamination by silicon as high as 1%. It was concluded that the silicon atoms at the boron site were most likely to be the donors in the grown BP film.
Journal
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 14 (6), 753-760, 1975
The Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1390001206268659968
-
- NII Article ID
- 210000018037
- 130003460540
-
- COI
- 1:CAS:528:DyaE2MXks12htrw%3D
-
- ISSN
- 13474065
- 00214922
-
- Text Lang
- en
-
- Data Source
-
- JaLC
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed