Effect of Growth Parameters on the Epitaxial Growth of BP on Si Substrate

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  • Nishinaga Tatau
    Department of Electrical Engineering, Faculty of Engineering, Nagoya University
  • Mizutani Takashi
    Department of Electrical Engineering, Faculty of Engineering, Nagoya University

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The effect of the growth parameters on the epitaxial growth of boron monophosphide (BP) was studied in detail for BBr3–PCl3–H2–Si substrate CVD system. The growth temperature, substrate orientation, PCl3/BBr3 molar ratio and substrate dimensions were varied independently keeping the other parameters constant. The best BP single crystal was grown at 1050°C on the thick and disk shaped substrate with {111} surface. The largest single crystal thus obtained had the dimensions of 3.5 cm2×55 μm. The highest mobility and the lowest carrier concentration were respectively 27 cm2/V·sec and 2.4×1019/cm3. Mass spectrometric analysis showed the contamination by silicon as high as 1%. It was concluded that the silicon atoms at the boron site were most likely to be the donors in the grown BP film.

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