Simplined High-Electric-Field Technique for Measuring the Liquid Crystal Anchoring Strength

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  • Yokoyama Hiroshi
    Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
  • Sun Ruipeng
    Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan

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  • Simplified High-Electric-Field Technique for Measuring the Liquid Crystal Anchoring Strength

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A simple passive approach, employing a small current-regulating capacitor connected in series with a liquid crystal cell, is proposed and its utility demonstrated as a new scheme of implementing the high-electric-field technique (HEFT) for determining the surface anchoring strength of liquid crystals. The series capacitor removes the cumbersome need for measuring the cell capacitance at high fields from the HEFT, thereby drastically simplifying the operation. The simplified HEFT allows a direct linear relation between the optical phase retardation and the reciprocal of the applied voltage, and as in the original HEFT, the linear extrapolation of this relationship to infinite voltage provides the anchoring strength.

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