Efficient Hole Generation above 10<sup>19</sup> cm<sup>-3</sup> in Mg-Doped InGaN/GaN Superlattices at Room Temperature

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  • Kumakura Kazuhide
    NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Makimoto Toshiki
    NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Kobayashi Naoki
    NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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  • Efficient Hole Generation above 1019 cm-3 in Mg-Doped InGaN/GaN Superlattices at Room Temperature

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We achieved spatially averaged hole concentrations above 1019 cm-3 at room temperature in Mg-doped InxGa1-xN/GaN (4 nm/4 nm) superlattices grown by metalorganic vapor phase epitaxy. The hole concentrations for the InxGa1-xN /GaN superlattices increased with the In mole fraction, and the maximum hole concentration reached 2.8× 1019 cm-3 for the In0.22Ga0.78N/GaN superlattice. The hole concentrations for the superlattices are larger than those for the InGaN bulk layers with the same average In mole fraction. The weak temperature dependence of the resistivities for InGaN/GaN superlattices with higher In mole fractions indicates highly efficient hole generation in the superlattice.

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