熱電変換材料　アーク溶解法で作製したケイ化ホウ素セラミックスの微細組織と熱電特性

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タイトル別名
  • Microstructure and Thermoelectric Property of Arc-melted Silicon Borides.
  • アーク ヨウカイホウ デ サクセイシタ ケイカ ホウソ セラミックス ノ ビサ

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Silicon borides were prepared by arc melting in argon atmosphere using silicon and boron powders in a boron content range from 80 to 94mol%. As-melted specimens consisted of SiBn, and free Si. The contents of free Si decreased from 30 to 3vol% as the boron content in raw material increased from 80 to 94mol%. The as-melted specimens were heat-treated in argon atmosphere at temperatures of 1400 to 1700K. During heat treatment, free Si reacted with SiBn near the SiBn-Si boundary to form SiB4, and as the result SiBn, -SiB4 composites were obtained. The SiBn-SiB4 composites showed larger electrical conductivity and smaller thermal conductivity than the as-melted specimens, which contributes to improvement of thermoelectrical property.

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