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- Higuchi Kazuo
- (株)豊田中央研究所
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- Noda Shoji
- (株)豊田中央研究所
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- Kamigaito Osami
- (株)豊田中央研究所
Bibliographic Information
- Other Title
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- ダイヤモンド薄膜形成に及ぼす基板の前処理効果
- ダイヤモンド ハクマク ケイセイ ニ オヨボス キバン ノ マエショリ コウカ
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Description
In the present study, we investigated deposition of diamond films on both Si substrates pre-treated with diamond powder by an ultrasonic vibrator and also further ion-implanted. The pre-treatment with diamond powders increased a density of diamond nucleation on Si substrate by five-order of magnitude against to the untreated substrate. 280keV Ar+ ion implantation at 90K to the pre-treated substrate significantly reduced the density of the diamond nucleation while the implantation at 773K scarcely affected the density. It is proposed that healing of micro-flaws, which are thought to work as the nucleation sites, is an important mechanism to reduce the diamond nucleation density by ion implantation.
Journal
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- Journal of the Japan Society of Powder and Powder Metallurgy
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Journal of the Japan Society of Powder and Powder Metallurgy 36 (2), 139-142, 1989
Japan Society of Powder and Powder Metallurgy
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Keywords
Details 詳細情報について
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- CRID
- 1390001206307761280
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- NII Article ID
- 130000813533
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- NII Book ID
- AN00222724
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- ISSN
- 18809014
- 05328799
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- NDL BIB ID
- 3236153
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed