N+ ion-irradiated Zr/SiO2 interface. XPS study.

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  • N`+´イオン照射したZr/SiO2界面  XPS法による研究
  • N + イオン ショウシャシタ Zr SiO2 カイメン XPSホウ ニ ヨル
  • XPS Study
  • XPS法による研究

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Abstract

Interface of N+ion-irradiated Zr/SiO2 was examined by the XPS method combined with Ar+ion sputteretching. The ion irradiation was found to form a diffusion layer at the interface and to generate chemical bonds like Zr-Si and Zr-O-Si in the diffusion layer. The diffusion layer was inferred to be an atomically mixed phase of Zr, Si, O, and N atoms rather than a mixed phase of Zr and SiO2.

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