N+ ion-irradiated Zr/SiO2 interface. XPS study.

DOI Web Site

Bibliographic Information

Other Title
  • Ｎ｀＋´イオン照射したＺｒ／ＳｉＯ２界面　　ＸＰＳ法による研究
  • N + イオン ショウシャシタ Zr SiO2 カイメン XPSホウ ニ ヨル
  • XPS Study
  • XPS法による研究

Search this article

Abstract

Interface of N+ion-irradiated Zr/SiO2 was examined by the XPS method combined with Ar+ion sputteretching. The ion irradiation was found to form a diffusion layer at the interface and to generate chemical bonds like Zr-Si and Zr-O-Si in the diffusion layer. The diffusion layer was inferred to be an atomically mixed phase of Zr, Si, O, and N atoms rather than a mixed phase of Zr and SiO2.

Journal

Keywords

Details 詳細情報について

Report a problem

Back to top