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- Noda Shoji
- (株)豊田中央研究所
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- Dohmae Kazuhiko
- (株)豊田中央研究所
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- Doi Haruo
- (株)豊田中央研究所
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- Kamigaito Osami
- (株)豊田中央研究所
Bibliographic Information
- Other Title
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- N`+´イオン照射したZr/SiO2界面 XPS法による研究
- N + イオン ショウシャシタ Zr SiO2 カイメン XPSホウ ニ ヨル
- XPS Study
- XPS法による研究
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Abstract
Interface of N+ion-irradiated Zr/SiO2 was examined by the XPS method combined with Ar+ion sputteretching. The ion irradiation was found to form a diffusion layer at the interface and to generate chemical bonds like Zr-Si and Zr-O-Si in the diffusion layer. The diffusion layer was inferred to be an atomically mixed phase of Zr, Si, O, and N atoms rather than a mixed phase of Zr and SiO2.
Journal
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- Journal of the Japan Society of Powder and Powder Metallurgy
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Journal of the Japan Society of Powder and Powder Metallurgy 35 (3), 177-179, 1988
Japan Society of Powder and Powder Metallurgy
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Keywords
Details 詳細情報について
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- CRID
- 1390001206309013376
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- NII Article ID
- 130000813241
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- NII Book ID
- AN00222724
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- ISSN
- 18809014
- 05328799
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- NDL BIB ID
- 3184639
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed