Influence of Rf Power on Structure and Physical Properties of Reactively Evaporated Zn2In2O5 Films.
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- Muranaka Shigetoshi
- Faculty of Integrated Human Studies, Kyoto University
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- Shigematsu Toshihiko
- Faculty of Science, Konan University
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Zn2In2O5 films were reactively deposited with assistance of rf discharge in the oxygen pressure of 3×10-2 Pa and at substrate temperatures of room temperature and 320°C. The applied rf power was varied from 0-450W. The influence of the rf power on the film structure and the physical properties was studied. At 320°C, crystallized films could be deposited at and above 100W, while at 25°C, the films were crystallized above 300W. The crystallized films deposited at 320°C and at 100-250W exhibited the highest electrical conductance with the resistivity of below 10-3Ωcm and the excellent light transmittance of averagely 85% in the visible light range. The optical band gap for the films was determined. The value was in the range of 3.42-3.58eV.
収録刊行物
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- 粉体および粉末冶金
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粉体および粉末冶金 49 (7), 570-575, 2002
一般社団法人 粉体粉末冶金協会
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詳細情報 詳細情報について
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- CRID
- 1390001206309128576
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- NII論文ID
- 10009579555
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- NII書誌ID
- AN00222724
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- ISSN
- 18809014
- 05328799
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- NDL書誌ID
- 6227666
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用不可