Capacitance characteristics and structure of anodic oxide films grown on rapidly quenched aluminum alloys
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- MOCHIZUKI Takashi
- Mochizuki MST Laboratory
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- MORIYAMA Hiroshi
- Faculty of Science, Toho University
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- TERASHIMA Keiichi
- Faculty of Engineering, Chiba Institute of Technology
Bibliographic Information
- Other Title
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- アルミニウム急冷合金陽極酸化皮膜の静電容量特性と皮膜構造
- アルミニウム キュウレイ ゴウキン ヨウキョク サンカ ヒマク ノ セイデン ヨウリョウ トクセイ ト ヒマク コウゾウ
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Abstract
Anodic oxide films grown on rapidly quenched aluminum alloys containing 2 at% Ti, Zr, Ta, Nb or Hf were characterized. The capacitance of the film on each alloy was found to be related to the dielectric constant of the alloying metal oxide film. In addition, the capacitance was found to depend on the degree of the exposure of the alloyed metal to the electrolyte, due to aluminum dissolution during the anodic oxidation. Capacitance varied with time, temperature and pH of the electrolyte in the anodic oxidation process. An oxide film of the barrier type was observed on Al3Zr by TEM, whereas the oxidation film of the Al–Ti alloy had a dual structure consisting of an inner layer with lower TiO2 content and an outer one with higher TiO2 content. It is considered that these phenomena were caused by the preferential dissociation of aluminum in the anodic oxidation process.
Journal
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- Journal of Japan Institute of Light Metals
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Journal of Japan Institute of Light Metals 57 (8), 366-370, 2007
The Japan Institute of Light Metals
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Details 詳細情報について
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- CRID
- 1390001206338602880
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- NII Article ID
- 10019520666
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- NII Book ID
- AN00069773
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- ISSN
- 18808018
- 04515994
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- NDL BIB ID
- 8934390
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed