Ostwald Ripening of Si Precipitates in Al-Si Alloys

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  • Ａｌ‐Ｓｉ合金におけるＳｉ析出物粒子のオストワルド成長
  • Al Si ゴウキン ニ オケル Si セキシュツブツ リュウシ ノ オストワ

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The coarsening behavior of Si precipitates in Al-Si alloys containing 0.60, 0.90 and 1.19wt% Si was studied electron microscopically. The coarsening data of the alloys aged at 573 to 773K were analyzed on the basis of the Lifshiz-Wagner theory on diffusion-controlled coarsening. The coarsening kinetics of the Si precipitates follows the time-law predictions of the theory at all ageing temperatures. The particle-size distribution of the Si precipitates is significantly broader than the theoretical one. The activation energy for the Ostwald ripening and the particle matrix interfacial free energy were determined.

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