Trimethylgallium Surface Reaction as a Function of GaAs Reconstructed Structure.
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- SASAKI Masahiro
- Institute of Applied Physics, University of Tsukuba
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- YOSHIDA Seikoh
- Yokohama R & D Laboratories, The Furukawa Electric Co., Ltd.
Bibliographic Information
- Other Title
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- GaAs表面再構成構造のトリメチルガリウムの表面反応
- GaAs ヒョウメン サイ コウセイ コウゾウ ト トリメチル ガリウム ノ
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Abstract
The surface reaction of trimethylgallium (TMG) is discussed as a function of relaxed or reconstructed GaAs surface structure on the basis of pulsed molecular beam scatterings from stoichiometry controlled GaAs(100), (110) and (111)B surfaces. The results are interpreted within the framework of the precursor-mediated adsorption mechanism, where TMG surface reaction is determined by the depth of the precursor state and the stability of the surface structure. It is believed that the precursor state is deepened by the electrostatic behavior in the GaAs surface structure. The topmost As atoms which have only bonds to As atoms hinder TMG trapping in the precursor state; implying the mechanism of the growth suppression on the (2×2)-reconstructed (111)B surface and the As-passivation technique.
Journal
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- Hyomen Kagaku
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Hyomen Kagaku 18 (12), 796-802, 1997
The Surface Science Society of Japan
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Details 詳細情報について
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- CRID
- 1390001206455122432
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- NII Article ID
- 10002265853
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- NII Book ID
- AN00334149
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- ISSN
- 18814743
- 03885321
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- NDL BIB ID
- 4352382
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed