第一原理計算によるＧａＡｓ（１１１）Ａ面上のエピタキシャル成長過程の検討

田口 明仁

doi:10.1380/jsssj.22.748

書誌事項

タイトル別名

First Principles Investigation of Epitaxial Growth Processes on a GaAs(111)A Surface.
ダイ1 ゲンリケイサンニヨル GaAs 111 Aメンジョウノエピタキシャルセイチョウカテイノケントウ

この論文をさがす

説明

Epitaxial growth processes on a GaAs(111)A surface were investigated by using first-principles pseudopotential calculations. Stable adsorption sites of adatoms, stable microstructures formed by adatoms, and interactions among the adatoms were investigated. The formation energies of various microstructures were estimated in order to investigate relative stability of the microstructures. We found that formation of a certain stable microstructure is essential to initiate the epitaxial growth. Based on the calculation results, we propose an epitaxial growth mechanism on the (111)A surface, which can qualitatively explain the characteristic properties of the surface.

収録刊行物

表面科学

表面科学 22 (11), 748-752, 2001

公益社団法人日本表面科学会

詳細情報詳細情報について

CRID: 1390001206456500992

NII論文ID: 10007485870

NII書誌ID: AN00334149

DOI: 10.1380/jsssj.22.748

COI: 1:CAS:528:DC%2BD38XotFWqsw%3D%3D

ISSN: 18814743; 03885321

NDL書誌ID: 5970433

Web Site: http://id.ndl.go.jp/bib/5970433; https://ndlsearch.ndl.go.jp/books/R000000004-I5970433; http://www.jstage.jst.go.jp/article/jsssj/22/11/22_11_748/_pdf

本文言語コード: ja

データソース種別

JaLC
NDLサーチ
Crossref
CiNii Articles
OpenAIRE

抄録ライセンスフラグ: 使用不可

書き出し

問題の指摘