書誌事項
- タイトル別名
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- Stress Evolution during Si(111)7×7 Surface Reconstruction
- Si(111)7 × 7 ヒョウメン サイコウセイ カテイ ノ ストレス ヘンイ
- Stress Evolution during Si(111)7×7 Surface Reconstruction
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抄録
<p>We have focused on stress measurements of the reconstructed Si(111) 7×7 and the hydrogen (H)-terminated Si(111) 1×1 surfaces. In order to obtain information on both the surface stress and the surface structure simultaneously, we have combined the surface-curvature and the reflection high-energy electron-diffraction instrumentations in an identical ultrahigh vacuum system. The surface stress behaviors during desorption and adsorption processes of hydrogen on the Si(111) surfaces reveal that the Si(111) 1×1 surface releases 1.6∼1.7 N/m (= J/m2), or 1.3∼1.4 eV/ (1×1 unit cell), of the surface energy from the strong tensile Si(111) 7×7 reconstruction.</p>
収録刊行物
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- 表面科学
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表面科学 37 (9), 446-450, 2016
公益社団法人 日本表面科学会
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詳細情報 詳細情報について
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- CRID
- 1390001206456909056
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- NII論文ID
- 130005416252
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- NII書誌ID
- AN00334149
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- ISSN
- 18814743
- 03885321
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- NDL書誌ID
- 027655671
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可