Understanding & Controlling the Graphene/SiO<sub>2</sub> Interaction
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- NAGASHIO Kosuke
- The University of Tokyo, Department of Materials Engineering
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- TORIUMI Akira
- The University of Tokyo, Department of Materials Engineering
Bibliographic Information
- Other Title
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- グラフェン/SiO<sub>2</sub>基板相互作用に対する理解と制御
- グラフェン/SiO₂基板相互作用に対する理解と制御
- グラフェン/SiO ₂ キバン ソウゴ サヨウ ニ タイスル リカイ ト セイギョ
- Understanding ^|^amp; Controlling the Graphene/SiO2 Interaction
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Description
The mobility of graphene transferred on a SiO2/Si substrate is limited to ∼10,000 cm2/Vs. Without understanding the graphene/SiO2 interaction, it is difficult to improve the electrical transport properties. Although surface structures on SiO2 such as silanol and siloxane groups are recognized, the relation between the surface treatment of SiO2 and graphene characteristics has not yet been elucidated. This paper discusses the electrical transport properties of graphene on specific surface structures of SiO2 prepared by O2-plasma treatments and reoxidization.
Journal
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- Hyomen Kagaku
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Hyomen Kagaku 33 (10), 552-556, 2012
The Surface Science Society of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390001206457365376
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- NII Article ID
- 10031123360
- 130004486705
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- NII Book ID
- AN00334149
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- COI
- 1:CAS:528:DC%2BC3sXit1Gmtr0%3D
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- ISSN
- 18814743
- 03885321
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- NDL BIB ID
- 024054554
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- Text Lang
- ja
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- Article Type
- journal article
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- Data Source
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- JaLC
- NDL Search
- Crossref
- CiNii Articles
- KAKEN
- OpenAIRE
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- Abstract License Flag
- Disallowed