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Arrangement of Catalyst Islands at Surface Atomic Steps toward Position Control of Nanowires
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- TATENO Kouta
- NTT Basic Research Laboratories, NTT Corporation
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- HIBINO Hiroki
- NTT Basic Research Laboratories, NTT Corporation
Bibliographic Information
- Other Title
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- 「半導体の表面・欠陥・ナノ構造の制御とその物性」ナノワイヤの配列制御に向けた触媒金属の表面原子ステップへの配置
- Published
- 2006
- DOI
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- 10.1380/jsssj.27.688
- Publisher
- The Surface Science Society of Japan
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Description
Using low-energy electron microscopy we show that Au deposition leads to the arrangement of three-dimensional islands at surface atomic steps on Si(111). Because the islands nucleate within a narrow coverage window, they have a small size distribution and their size can be precisely controlled by the deposition time. During the Au deposition on the surface with a controlled island density, the islands move into upper terraces with trenches left behind. This indicates that the islands are Au-Si alloy droplets. The Au-Si alloy islands act as catalysts for the nanowire formation based on the vapor-liquid-solid (VLS) mechanism, which enables us to fabricate the one-dimensional alignment of vertical GaP nanowires. Controlling the size and position of the nanostructures by using surface atomic steps as templates means “top-down” lithographic techniques are not needed. Our method is a pure “bottom-up” self-assembly one and is expected to greatly contribute to establishing self-assembled nano-device fabrication methods.
Journal
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- Hyomen Kagaku
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Hyomen Kagaku 27 (12), 688-694, 2006
The Surface Science Society of Japan
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Details 詳細情報について
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- CRID
- 1390001206457920640
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- NII Article ID
- 130004486306
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- ISSN
- 18814743
- 03885321
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- Text Lang
- ja
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed
