Interface Characterization and Control of GaN-based Heterostructures

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  • HASHIZUME Tamotsu
    Research Center for Integrated Quantum Electronics, Hokkaido University
  • YATABE Zenji
    Research Center for Integrated Quantum Electronics, Hokkaido University
  • SATO Taketomo
    Research Center for Integrated Quantum Electronics, Hokkaido University

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Other Title
  • 窒化物半導体異種接合の界面評価と制御
  • チッカブツ ハンドウタイ イシュ セツゴウ ノ カイメン ヒョウカ ト セイギョ

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Description

Interface properties of GaN-based heterostructures have been characterized. Schottky contacts on dry-etched n-GaN layers showed leaky I-V characteristics. An anneal process at 400°C was effective in recovering the rectifying characteristics. To characterize interface properties of Al2O3 insulated gates on AlGaN/GaN structures with and without the inductively coupled plasma (ICP) etching of AlGaN, we have developed a C-V calculation method taking into account electronic state charges at the Al2O3/AlGaN interface and a photoassisted C-V technique utilizing photons with energies less than the bandgap of AlGaN. It was found that the ICP etching caused the monolayer-level interface roughness, disorder of the chemical bonds and formation of various types of defect complexes at the AlGaN surface, resulting in poor C-V characteristics due to high-density interface states at the Al2O3/AlGaN interface.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 35 (2), 96-101, 2014

    The Surface Science Society of Japan

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