GaAs Surface under Molecular-Beam Epitaxial Growth Conditions

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  • 結晶成長条件下におけるGaAs(001)表面構造
  • ケッショウ セイチョウ ジョウケン カ ニ オケル GaAs(001)ヒョウメン コウゾウ

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Description

Surface sturctures of GaAs(001) under growth conditions have been investigated using in situ X-ray diffraction. Theatomic arrangements of GaAs(001) surface stabilized at an elevated temperature under As pressure were quantitativelydetermined in a molecular-beam epitaxy chamber integrated with an X-ray diffractometer. With the help of high angularresolution of synchrotron radiation, disordered sructures appearing in the transition from (2×4) to other phases wereclarified. Energy tunability of synchrotron X-rays allowed for element-sepcific analysis of the c (4×4) struture,providing direct evidence for Ga-As heterodimer formation.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 33 (9), 507-512, 2012

    The Surface Science Society of Japan

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