Observation of Graphene-on-Diamond Formation Studied by Real-Time Photoelectron Spectroscopy

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  • リアルタイム光電子分光によるグラフェン・オン・ダイヤモンド形成過程の観察
  • リアルタイム コウデンシ ブンコウ ニ ヨル グラフェン ・ オン ・ ダイヤモンド ケイセイ カテイ ノ カンサツ

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Graphene-on-insulator structures are required for fabrication of the graphene transistor. Diamond has been attracted as the substrate for graphene growth because it has a larger band gap and break down voltage compared with SiC. The detail of graphitization on a diamond surface has not yet been clarified because the nondestructive evaluation for graphene on diamond (GOD) structure was hard. In this study, we have developed the evaluation method of GOD based on the photoemission spectroscopy using synchrotron radiation focusing the shift of photoelectron spectra due to band bending. We can clearly determine the graphitization temperature on the diamond C(111) surface as approximately 1120 K, which is lower than that on an SiC substrate. It is also confirmed from C 1s photoelectron spectra, there is the buffer layer at the interface between the grapheme layer and the diamond substrate.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 33 (8), 449-454, 2012

    The Surface Science Society of Japan

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