書誌事項
- タイトル別名
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- Charging of Insulating Materials during AES Measurements
- デンシセン ガ ゼツエンブツ ニ アタエル タイデン ト ソノ ホショウ
- —Some Approaches for Charging Compensation—
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The electron irradiation to non-conductive materials causes building up of surface charge that makes the electron probe analysis, such as AES or EMPA, difficult. On the other hand, small area analysis is needed increasingly especially for insulating portions of semiconductor devices and ceramics (sapphire, quartz glass and so on). Therefore, charge compensation in AES analysis that provides high special resolution has becomes important. This paper introduces the conventional charge compensation methods and shows some applications of using the low energy ion irradiation method.
収録刊行物
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- 表面科学
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表面科学 25 (4), 217-223, 2004
公益社団法人 日本表面科学会
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詳細情報 詳細情報について
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- CRID
- 1390001206458194176
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- NII論文ID
- 10012860686
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- NII書誌ID
- AN00334149
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- COI
- 1:CAS:528:DC%2BD2cXlsVWjtLg%3D
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- ISSN
- 18814743
- 03885321
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- NDL書誌ID
- 6919677
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可