書誌事項
- タイトル別名
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- Diamond/Nitride Semiconductor Heterostructure: Growth and Properties
- ダイヤモンド チッカブツ ハンドウタイ ヘテロ コウゾウ ノ ケッショウ セイチョウ ト ブッセイ
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Diamond/III-V nitride semiconductor heterostructure appears promising not only for high-efficiency deep-UV light emitting diodes (LEDs) but also for high output power field-effect transistors (FETs). However, diamond has a diamond crystal structure, while III-V nitride semiconductors have a wurtzite crystal structure. Due to the deference in the crystal structures, single-crystal III-V nitride growth on diamond substrate was difficult. In this study, we obtained the single-crystal aluminum nitride (AlN) (0001) layers on diamond substrates by using (111) diamond surface orientation and preventing the formation of the interface layer. Then, we revealed the heteroepitaxial growth mechanism and proposed an atomic arrangement model at the diamond/AlN heterointerface. Furthermore, we demonstrated a p-type diamond/n-type AlN heterojunction diode and successfully observed band-edge emission from diamond. In addition, an AlGaN/GaN heterostructure with two-dimensional electron gas (2DEG) was grown on diamond (111) using the single-crystal AlN buffer layer.
収録刊行物
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- 表面科学
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表面科学 31 (12), 657-666, 2010
公益社団法人 日本表面科学会
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詳細情報 詳細情報について
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- CRID
- 1390001206458707584
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- NII論文ID
- 10027573936
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- NII書誌ID
- AN00334149
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- ISSN
- 18814743
- 03885321
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- NDL書誌ID
- 10934862
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可