Formation of III-V Compound Semiconductor Nanowires by using Selective-area MOVPE

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  • TOMIOKA Katsuhiro
    Graduate School of Information Science and Technology, Hokkaido University
  • SATO Takuya
    Graduate School of Information Science and Technology, Hokkaido University
  • HARA Shinjiroh
    Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
  • MOTOHISA Junichi
    Graduate School of Information Science and Technology, Hokkaido University
  • FUKUI Takashi
    Graduate School of Information Science and Technology, Hokkaido University Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University

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Other Title
  • ＭＯＶＰＥ選択成長法を用いたＩＩＩ－Ｖ族化合物半導体ナノワイヤの形成
  • MOVPE選択成長法を用いた3-5族化合物半導体ナノワイヤの形成
  • MOVPE センタク セイチョウホウ オ モチイタ 3 5ゾク カゴウブツ ハンドウタイ ナノワイヤ ノ ケイセイ

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Description

We report on the growth of III-V compound semiconductor nanowires by selective-area MOVPE. Position-controlled growth of GaAs nanowire, and InP/InAs/InP core-multi shell nanowires are reviewed. The nanowires are oriented to <111>B or <111>A directions and they have hexagonal cross-section surrounded with {1-10} vertical side facets and (111)B or A top surface. Also, we can control the growth direction to axial or radial by changing the growth parameters. InP/InAs/InP core-multi shell nanowires whose well thickness is of several monolayers are fabricated by using this method. We also review on the growth of vertical GaAs nanowires on Si substrate and fabrication of InGaAs nanowire-FETs.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 29 (12), 726-730, 2008

    The Surface Science Society of Japan

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