Fabrication of a SiC/Ge-Nanodots Stacked Structure Using Organometallic Compounds
-
- ANEZAKI Yutaka
- Nagaoka University of Technology
-
- OTANI Takashi
- Nagaoka University of Technology
-
- SUDO Haruki
- Nagaoka University of Technology
-
- KATO Takahiro
- Nagaoka University of Technology
-
- KATO Ariyuki
- Nagaoka University of Technology
-
- SUEMITSU Maki
- Research Institute of Electrical Communication, Tohoku University
-
- NARITA Yuzuru
- Yamagata University
-
- NAKAZAWA Hideki
- Hirosaki University
-
- YASUI Kanji
- Nagaoka University of Technology
Bibliographic Information
- Other Title
-
- 有機金属化合物を用いたSiC/Geナノドット積層構造の作製
- ユウキ キンゾク カゴウブツ オ モチイタ SiC/Ge ナノドット セキソウ コウゾウ ノ サクセイ
Search this article
Description
Ge(GeCx) and SiC(SiCGex) nanodots were formed on Si(001)2o off substrates after the formation of Si c(4×4) structure using monomethylgermane (MMGe). Surface structure of the Ge(GeCx) and SiC(SiCGex) nanodots was measured by scanning tunneling microscopy (STM). From the quantitative analysis of X-ray photoelectron spectroscopy (XPS), it was estimated that the Ge(GeCx) and SiC(SiCGex) nanodots existed in the ratio of about 1 : 2.4. SiC capping layer was formed on the Ge(GeCx), SiC(SiCGex) nanodots generated at 550∼650oC using monomethylsilane (MMSi). Photoluminescence (PL) spectra from the SiC/Ge (GeCx), SiC(SiCGex) dots/SiCx stacked structure were also measured.
Journal
-
- Hyomen Kagaku
-
Hyomen Kagaku 33 (7), 376-381, 2012
The Surface Science Society of Japan
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390001206459266304
-
- NII Article ID
- 10030824383
-
- NII Book ID
- AN00334149
-
- ISSN
- 18814743
- 03885321
-
- NDL BIB ID
- 023885147
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed
